10
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
VDD
=28Vdc,IDQA
= 550 mA,
Pulsed CW, 10
μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(?)
Zload
(1)
(?)
Max Output Power
P1dB
P3dB
(dBm)
(W)
ηD
(%)
(dBm)
(W)
ηD
(%)
1930
16.0 -- j8.99
1.58 -- j5.68
50.4
110
55.3
51.2
132
55.8
1960
17.2 -- j2.43
1.55 -- j6.08
50.4
110
54.4
51.3
135
53.5
1990
18.6 + j3.55
1.93 -- j5.82
50.4
110
54.4
51.2
132
55.4
(1) Load impedance for optimum P1dB power.
Zsource
= Impedance as measured from gate contact to ground.
Zload
= Impedance as measured from drain contact to ground.
Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Zsource
Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD
=28Vdc,IDQA
= 550 mA,
Pulsed CW, 10
μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(?)
Zload
(1)
(?)
Max Drain Efficiency
P1dB
P3dB
(dBm)
(W)
ηD
(%)
(dBm)
(W)
ηD
(%)
1930
16.0-- j8.99
3.45 -- j3.43
48.5
71
65.8
49.6
91
66.5
1960
17.2 -- j2.43
3.68 -- j3.88
48.7
74
65.6
49.6
91
66.1
1990
18.6 + j3.55
2.95-- j3.99
48.2
66
65.1
49.6
91
65.3
(1) Load impedance for optimum P1dB efficiency.
Zsource
= Impedance as measured from gate contact to ground.
Zload
= Impedance as measured from drain contact to ground.
Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Zsource
Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
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功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRF8P23080HSR5
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